JPH03129740A - Ｍｏｓ型半導体装置の製造方法 - Google Patents
Ｍｏｓ型半導体装置の製造方法Info
- Publication number
- JPH03129740A JPH03129740A JP20610190A JP20610190A JPH03129740A JP H03129740 A JPH03129740 A JP H03129740A JP 20610190 A JP20610190 A JP 20610190A JP 20610190 A JP20610190 A JP 20610190A JP H03129740 A JPH03129740 A JP H03129740A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- drain
- source
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000012535 impurity Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 22
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000001312 dry etching Methods 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- 239000011574 phosphorus Substances 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 230000005669 field effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20610190A JPH03129740A (ja) | 1977-09-14 | 1990-08-02 | Ｍｏｓ型半導体装置の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072477A JPS5444482A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
| JP20610190A JPH03129740A (ja) | 1977-09-14 | 1990-08-02 | Ｍｏｓ型半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11072477A Division JPS5444482A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03129740A true JPH03129740A (ja) | 1991-06-03 |
| JPH0465530B2 JPH0465530B2 (en]) | 1992-10-20 |
Family
ID=26450281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20610190A Granted JPH03129740A (ja) | 1977-09-14 | 1990-08-02 | Ｍｏｓ型半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03129740A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009268674A (ja) * | 2008-05-07 | 2009-11-19 | Kyoto Nishikawa:Kk | 敷ふとん形態の家庭用電気治療器 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5232277A (en) * | 1975-09-05 | 1977-03-11 | Toshiba Corp | Insulated gate type field-effect transistor |
| JPS5250686A (en) * | 1975-10-22 | 1977-04-22 | Hitachi Ltd | Production of semiconductor device |
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
-
1990
- 1990-08-02 JP JP20610190A patent/JPH03129740A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5232277A (en) * | 1975-09-05 | 1977-03-11 | Toshiba Corp | Insulated gate type field-effect transistor |
| JPS5250686A (en) * | 1975-10-22 | 1977-04-22 | Hitachi Ltd | Production of semiconductor device |
| JPS5284981A (en) * | 1976-01-06 | 1977-07-14 | Mitsubishi Electric Corp | Production of insulated gate type semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009268674A (ja) * | 2008-05-07 | 2009-11-19 | Kyoto Nishikawa:Kk | 敷ふとん形態の家庭用電気治療器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0465530B2 (en]) | 1992-10-20 |
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